* Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volt
2SA2181
Sanyo Semicon Device
68.00 KB
Pnp epitaxial planar silicon transistor.
www.DataSheet4U.com Ordering number : EN8527 2SA2181 PNP Epitaxial Planar Silicon Transistor 2SA2181 Applications 50V / 15A High-Speed .
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