* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base V
2SA2197
Sanyo Semicon Device
71.22 KB
Pnp / npn epitaxial planar silicon transistors.
www.DataSheet4U.com
Ordering number : ENA0463
2SA2197 / 2SC6102
SANYO Semiconductors
DATA SHEET
2SA2197 / 2SC6102
Applications
*
PNP / N.
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