* Adoption of FBET process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
2SC3576
Sanyo Semicon Device
106.51 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN1799D
NPN Epitaxial Planar Silicon Transistor
2SC3576
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
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📁 Related Datasheet
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2SC3570 - Power Transistor
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isc Silicon NPN Power Transistor
2SC3570
DESCRIPTION ·Collector-Emitter Sustaining Voltage
: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage.
2SC3571 - NPN SILICON POWER TRANSISTOR
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DESCRIPTION ·Collector-Emitter Sustaining Voltage
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DESCRIPTION ·High Collector-Base Breakdown Voltage-
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DESCRIPTION ·With TO-3PFa package ·High bre.
