2SC3576 NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Description

Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications .

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Datasheet Specifications

Part number: 2SC3576
Manufacturer: Sanyo Semicon Device
File Size: 106.51 KB
Datasheet: 2SC3576_SanyoSemiconDevice.pdf
Description: NPN Epitaxial Planar Silicon Transistor

Features

* Adoption of FBET process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base

Applications

* Applications

2SC3576 Distributors

📁 Related Datasheet

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2SC3576 NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device

Sanyo Semicon Device 2SC3576-like datasheet