2SC3576 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3576
Manufacturer	Sanyo Semicon Device
File Size	106.51 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3576_SanyoSemiconDevice.pdf

Adoption of FBET process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO V.

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Published: Mar 22, 2005 |