Part number:
2SC3576
Manufacturer:
Sanyo Semicon Device
File Size:
106.51 KB
Description:
Npn epitaxial planar silicon transistor.
Datasheet Details
2SC3576 Features
* Adoption of FBET process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
Datasheet Details
2SC3576
Sanyo Semicon Device
106.51 KB
Npn epitaxial planar silicon transistor.
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