* High fT.
* High breakdown voltage.
* Small reverse transfer capacitance and excellent high-frequency characteristic.
* Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 Specifications Absolute Maximum Ra
2SC4080
Sanyo Semicon Device
19.23 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Featu.
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