2SC4204 Datasheet - Sanyo Semicon Device

2SC4204 NPN Epitaxial Planar Silicon Transistor

2SC4204 Features

* Adoption of MBIT process.

* High DC current gain (hFE=800 to 3200).

* Large current capacity (IC=0.7A).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings

Datasheet Details

2SC4204

Sanyo Semicon Device

136.10 KB

Npn epitaxial planar silicon transistor.

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