2SC4612 - PNP/NPN Epitaxial Planar Silicon Transistors
2SC4612 Features
* Adoption of MBIT process.
* High breakdown voltage, large current capacity.
* Fast switching speed. Package Dimensions unit:mm 2064 [2SA1768/2SC4612] ( ) : 2SA1768 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage
