* Adoption of MBIT process.
* High breakdown voltage, large current capacity.
* Fast switching speed. Package Dimensions unit:mm 2064 [2SA1768/2SC4612] ( ) : 2SA1768 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage
2SC4612
Sanyo Semicon Device
152.22 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3582
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1768/2SC4612
High-Voltage Switching Applications
Applicaitons
* Color TV .
📁 Related Datasheet
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2SC460, 2SC461
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Application
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Outline
TO-92 (2)
1..
2SC461 - Silicon NPN epitaxial planar type Transistor
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REJ03G0682-0200 (Previous ADE-208-1046) Rev.2.00 Aug.10.2005
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Ordering number:ENN3578
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High-Voltage Switching Applications
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Ordering number : EN3578A
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Features
• •
http://onsemi.
Ado.
2SC4615 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:EN3398A
Features
· Large current capacity (IC=1A). · High breakdown votlage (VCEO≥400V).
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2SC4615 - Silicon NPN Triple Diffused Type Transistor
(Kexin)
SMD Type
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Silicon NPN Triple Diffused Type Transistor 2SC4615
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
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(Sanyo Semicon Device)
Ordering number:EN3399C
Features
· Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V).
2SA1773 : PNP Eppitaxial Planar Silicon Tran.
