* Adoption of FBET, MBIT processes.
* Large currrent capacity and wide ASO.
* Low collector-to-emitter saturation voltage.
* Fast switching speed.
* Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector S
2SD1802
Sanyo Semicon Device
181.10 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN2113B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1202/2SD1802
High-Current Switching Applications
Applications
* Voltage .
📁 Related Datasheet
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage-
: VCE(sa.
2SD1800 - NPN Epitaxial Silicon Transistor
(Sanyo Semicon Device)
.
2SD1801 - Bipolar Transistor
(ON Semiconductor)
Ordering number : EN2112C
2SB1201/2SD1801
Bipolar Transistor
(–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
http://onsemi.
Applications
.
2SD1801 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1801
DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i.
2SD1801 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number : EN2112C
2SB1201/2SD1801
SANYO Semiconductors
DATA SHEET
2SB1201/2SD1801
PNP/NPN Epitaxial Planar Silicon Transistor
High-Current.
2SD1802 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1802
DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i.
2SD1802 - NPN Transistor
(TRANSYS)
Transys
Electronics
LIMITED
TO-251/TO-252-2Plastic-Encapsulated Transistors
2SD1802 TRANSISTOR (NPN)
FEATURES Power dissipation
PCM:
1 W (Tamb=25℃.
2SD1802 - NPN Epitaxial Planar Silicon Transistors
(GME)
Production specification
NPN Epitaxial Planar Silicon Transistors
2SD1802
FEATURES
Adoption of FBET,MBIT processes.
Pb
Large current capacit.
