* High DC current gain.
* Low saturation voltage. w w w . D a t a S h e e t 4 U . c o m 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vol
2SD1853
Sanyo Semicon Device
92.54 KB
Npn epitaxial planar silicon darlington transistor.
Ordering number:EN2506
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1853
Driver Applications
Applications
* Motor drivers, hammer drive.
📁 Related Datasheet
2SD1850 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD1850
DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations.
2SD1851 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN2553A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1234/2SD1851
Driver Applications
Features
· AF amplifier, solenoid drivers, .
2SD1852 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN2554A
Features
· AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain.
PNP/NPN Epitaxial Pl.
2SD1854 - NPN Epitaxial Silicon Transistor
(Sanyo Semicon Device)
.
2SD1855 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 4A ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@IC= 3A ·Wide Ar.
2SD1855 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1855
..
DESCRIPTION ·With TO-220Fa package ·Comple.
2SD1856 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1856
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min) @IC= 2A ·Low Collector.
2SD1856 - Medium Power Transistor
(Rohm)
.
