* High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E
2SD612K
Sanyo Semicon Device
363.58 KB
Pnp/npn epitaxial planar silicon transistor.
Ordering number:341G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency Power Amplifier Applications
Fe.
📁 Related Datasheet
2SD612 - PNP/NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:341G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency Power Amplifier Applications
Fe.
2SD612 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD612
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 25V(Min.) ·High Collector Dissipation ·Wide Ar.
2SD612 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package .. ·Complement to type .
2SD612K - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package .. ·Complement to type .
2SD613 - PNP/NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:513H
PNP/NPN Epitaxial Planar Silicon Transistor
2SB633/2SD613
85V/6A, AF 25 to 35W Output Applications
Features
· High breakdown vo.
2SD613 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD613
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 85V(Min) ·Complement to Type 2SB633 ·Minimum L.
2SD613 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD613
..
DESCRIPTION ·With TO-220C package ·Compleme.
2SD613P - PNP / NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
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