2SK1065 - N-Channel Junction Silicon FET

Sanyo Semicon Device

Datasheet Details

Part number	2SK1065
Manufacturer	Sanyo Semicon Device
File Size	41.14 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK1065_SanyoSemiconDevice.pdf

Ultrasmall package facilitates miniaturization in end products.
Small Crss (Crss=0.04pF typ). 0.425 Package Dimensions unit:mm 2057A [2SK1065] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Gate 2 : Drain 3 : Source SANYO : MCP Conditions.

📁 2SK1065 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Mar 30, 2005 |