2SK1069 - N-Channel Junction Silicon FET

Sanyo Semicon Device

Datasheet Details

Part number	2SK1069
Manufacturer	Sanyo Semicon Device
File Size	96.58 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK1069_SanyoSemiconDevice.pdf

Adoption of FBET process.
Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2058 [2SK1069] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Co.

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Published: Mar 30, 2005 |