2SK1646 Datasheet, mesfet equivalent, Sanyo Semicon Device

2SK1646 Features

• Mesfet
• Package Dimensions unit : mm 2134A [2SK1646] 1.9 0.95 0.95 0.4
• Ideal for use in C to X-band local oscillator and amplifier. The chip surface

PDF File Details

Part number:

2SK1646

Manufacturer:

Sanyo Semicon Device

File Size:

33.27kb

Download:

📄 Datasheet

Description:

N-channel gaas mesfet.

2SK1646 Application

• Applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whos

TAGS

2SK1646

Sanyo Semicon Device

📁 Related Datasheet

2SK1642 - Silicon N-Channel MOSFET (Toshiba)
.

2SK1643 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Fast Switching Speed ·Minimum Lot-.

2SK1643 - Silicon N-Channel MOSFET (Toshiba)
.

2SK1645 - N-Channel Ga As MESFET (Sanyo Semicon Device)
Ordering number : ENN*0000 2SK1645 N-Channel Ga As MESFET 2SK1645 For C to X-band Local Oscillator and Amplifier Preliminary Features • • • Package.

2SK1647 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.

2SK1647L - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.

2SK1647S - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK1647(L), 2SK1647(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.

2SK1649 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor 2SK1649 DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variat.

2SK160 - N-Channel FET (NEC)
.

2SK1600 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for.