Part number:
2SK1646
Manufacturer:
Sanyo Semicon Device
File Size:
33.27 KB
Description:
N-channel gaas mesfet.
* Package Dimensions unit : mm 2134A [2SK1646] 1.9 0.95 0.95 0.4
* Ideal for use in C to X-band local oscillator and amplifier. The chip surface is covered with the highly reliable protection film. Super miniaturized plastic-mold package (CP4). Automatic surfa
2SK1646
Sanyo Semicon Device
33.27 KB
N-channel gaas mesfet.
📁 Related Datasheet
2SK1642 - Silicon N-Channel MOSFET
(Toshiba)
.
2SK1643 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900 (Min) ·Fast Switching Speed ·Minimum Lot-.
2SK1643 - Silicon N-Channel MOSFET
(Toshiba)
.
2SK1645 - N-Channel Ga As MESFET
(Sanyo Semicon Device)
Ordering number : ENN*0000
2SK1645
N-Channel Ga As MESFET
2SK1645
For C to X-band Local Oscillator and Amplifier
Preliminary Features
• • •
Package.
2SK1647 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK1647(L), 2SK1647(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
2SK1647L - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK1647(L), 2SK1647(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
2SK1647S - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK1647(L), 2SK1647(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
2SK1649 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK1649
DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900 (Min) ·Minimum Lot-to-Lot variat.
