2SK1813 Datasheet, Mosfet, Sanyo Semicon Device

2SK1813 Features

• Mosfet
• Low ON resistance.
• Ultrahigh-speed switching.
• Converters. N-Channel Silicon MOSFET 2SK1813 High-Speed Switching Applications Package Dimensions unit:mm 20

PDF File Details

Part number:

2SK1813

Manufacturer:

Sanyo Semicon Device

File Size:

102.69kb

Download:

📄 Datasheet

Description:

N-channel silicon mosfet.

2SK1813 Application

• Applications Package Dimensions unit:mm 2089 [2SK1813] 10.2 4.5 1.3 11.5 1.6 0.9 11.0 8.8 20.9 1.2 9.4 0.8 0.4 Specifications 123 2.55 2.55

TAGS

2SK1813

Sanyo Semicon Device

📁 Related Datasheet

2SK181 - (2SK180 - 2SK183) Power FET (Yoshino International)
.. .. .. .. .

2SK1815 - N-Channel Silicon Power MOSFET (Fuji Semiconductors)
.. . ee DataSh . . DataSheet 4 U . .. . m et4U.co .

2SK1817-M - N-channel MOS-FET (Fuji Electric)
2SK1817-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS.

2SK1818-MR - N-Channel MOSFET (Fuji Electric)
.

2SK1819 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK1819 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Fast Switching Speed ·Min.

2SK1819-01MR - N-Channel MOSFET (Fuji Electric)
.

2SK18 - Silicon N-Channel Transistor (Toshiba)
: SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE) DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Low Offset : VgS1 VgS2 =10mV (Max.).

2SK180 - Power FET (Yoshino International)
.. .. .. .. .

2SK1803 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot.

2SK1803 - Silicon N-Channel MOSFET (Panasonic)
Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee.