2SK18 Datasheet - Toshiba

2SK18 Silicon N-Channel Transistor

2SK18 Features

* Low Offset : VgS1"VgS2 =10mV (Max.)

* Good Tracking : ^|VGSl-VGS2|/^Ta=20/tV/°C .(Max.). (2SK18A)

* High Input Impedance : Ic=-100pA (Max.) at VDs=10V, ID=400yA.

* Similar Characteristics as 2SK15. 2SK18 2SK18A CHARACTERISTIC Gate-Drain Voltage Gate Current Drain

Datasheet Details

2SK18

55.10 KB

Silicon n-channel transistor.

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2SK18 2SK18 Silicon N-Channel Transistor Toshiba

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