2SK1808 Datasheet, Mosfet, Hitachi Semiconductor

2SK1808 Features

• Mosfet
• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outli

PDF File Details

Part number:

2SK1808

Manufacturer:

Hitachi Semiconductor

File Size:

33.54kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

2SK1808

Hitachi Semiconductor

📁 Related Datasheet

2SK180 - Power FET (Yoshino International)
.. .. .. .. .

2SK1803 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot.

2SK1803 - Silicon N-Channel MOSFET (Panasonic)
Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee.

2SK1805 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK1805 DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Min.

2SK1805 - Field Effect Transistor (Toshiba)
.. .. .. .. .. .

2SK1807 - N-Channel MOSFET (Hitachi Semiconductor)
2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK1807 - Silicon N-Channel MOSFET (Renesas)
2SK1807 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No .

2SK1807 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK1807 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed ·Min.

2SK1809 - N-Channel MOSFET (Hitachi Semiconductor)
2SK1809 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK1809 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Low on-resis.