Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D G
1
2
2SK1803, Panasonic
Power F-MOS FETs
2SK1803
Silicon N-Channel Power F-MOS FET
s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-spee.
2SK1807, Hitachi Semiconductor
2SK1807
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
2SK1807, Renesas
2SK1807
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No .
