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2SK1831, 2SK1832
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1831, 2SK1832
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage K1831 K1832 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.