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SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE)
DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES
• Low Offset : VgS1"VgS2 =10mV (Max.) • Good Tracking
: ^|VGSl-VGS2|/^Ta=20/tV/°C .(Max.). (2SK18A) • High Input Impedance : Ic=-100pA (Max.)
at VDs=10V, ID=400yA. • Similar Characteristics as 2SK15.
2SK18 2SK18A
CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
1. SOURCE (1) 2. GATE (1) S DRAIN (1) 4, DRA IN (2)
5 OATE (2) 6 SOURCE (2) 7. CASE
- SYMBOL VGDS IG PD
Tj
Tstg
RATING -40 10 200 150
-65VL50
UNIT V mA mW °C °C
TOSHIBA
2 — 9C 1 A
Weight : 0.
2SK18 Datasheet
