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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications Analog Switch Applications Interface Applications
2SK1061
Unit: mm
• Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 0.6 Ω (typ.) • Enhancement-mode
• Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID IDP PD Tch Tstg
200 800 300 150 −55~150
mA
mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.
2SK1061 Datasheet
