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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1062
High Speed Switching Applications Analog Switching Applications Interface Applications
2SK1062
Unit: mm
• Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min)
@ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode
• Complementary to 2SJ168
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS VGSS
ID IDP PD Tch Tstg
60 ±20 200 800 200 150 −55~150
V V
mA
mW °C °C
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.
2SK1062 Datasheet
