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2SK18A - Silicon N-Channel Transistor

Download the 2SK18A datasheet PDF. This datasheet also covers the 2SK18 variant, as both devices belong to the same silicon n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Offset : VgS1"VgS2 =10mV (Max. ).
  • Good Tracking : ^|VGSl-VGS2|/^Ta=20/tV/°C . (Max. ). (2SK18A).
  • High Input Impedance : Ic=-100pA (Max. ) at VDs=10V, ID=400yA.
  • Similar Characteristics as 2SK15. 2SK18 2SK18A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK18-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK18A
Manufacturer Toshiba
File Size 55.10 KB
Description Silicon N-Channel Transistor
Datasheet download datasheet 2SK18A Datasheet

📁 Similar Datasheet

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2SK1807 N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Toshiba

Part Number Description
2SK18 Silicon N-Channel Transistor
2SK1805 Field Effect Transistor
2SK1858 Silicon N-Channel MOSFET
2SK1078 MOSFET
2SK1079 N-Channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE) DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Low Offset : VgS1"VgS2 =10mV (Max.) • Good Tracking : ^|VGSl-VGS2|/^Ta=20/tV/°C .(Max.). (2SK18A) • High Input Impedance : Ic=-100pA (Max.) at VDs=10V, ID=400yA. • Similar Characteristics as 2SK15. 2SK18 2SK18A CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range 1. SOURCE (1) 2. GATE (1) S DRAIN (1) 4, DRA IN (2) 5 OATE (2) 6 SOURCE (2) 7. CASE - SYMBOL VGDS IG PD Tj Tstg RATING -40 10 200 150 -65VL50 UNIT V mA mW °C °C TOSHIBA 2 — 9C 1 A Weight : 0.