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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK1837
·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed switching ·Low gate input resistance ·No secondary breakdown ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Load switch ·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation @TC=25℃
25
Tj
Max.