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2SK1837 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1836, 2SK1837 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage K1836 K1837 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperat.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK1831 Silicon N-Channel MOSFET
2SK1832 Silicon N-Channel MOSFET
2SK1835 Silicon N-Channel MOSFET
2SK1836 Silicon N-Channel MOSFET
2SK1838 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1836, 2SK1837 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage K1836 K1837 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.