2SK2171 - N-Channel Junction Silicon FET

Product Overview

Sanyo Semicon Device

Part number	2SK2171
Manufacturer	Sanyo Semicon Device
File Size	178.07 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK2171 Datasheet
Additional preview pages of the 2SK2171 datasheet.

Adoption of FBET process.
Large | yfs |.
Small Ciss.
High PD allowable power dissipation. Package Dimensions unit:mm 2125 [2SK2171] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Symbol VDSX VGDS IG ID Allowable Power Dissipation PD Junction Temperature Stor.

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Other Datasheets by Sanyo Semicon Device

Published: Mar 30, 2005 |