Part number:
2SK3120
Manufacturer:
Sanyo Semicon Device
File Size:
136.72 KB
Description:
N-channel mosfet.
* Low ON resistance.
* Ultrahigh-speed switching.
* 4V drive. Package Dimensions unit:mm 2062A [2SK3120] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain
2SK3120
Sanyo Semicon Device
136.72 KB
N-channel mosfet.
📁 Related Datasheet
2SK312 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK312
FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage
: VDSS= 400V(Min) ·Static Drain-Source On-Res.
2SK312 - Silicon N-Channel MOSFET
(Hitachi)
OEM: Hitachi
MOSFET Transistor 2SK312 / K312
Datasheet
Datasheet Rev. 2.0 – 09/19 – data without warranty / liability
OEM: Hitachi
MOSFET Transis.
2SK3121 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6104A
N-Channel Silicon MOSFET
2SK3121
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swi.
2SK3122 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number:ENN6105A
N-Channel Silicon MOSFET
2SK3122
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swi.
2SK3124 - N-Channel MOSFET
(Panasonic Semiconductor)
Power F-MOS FETs
2SK3124
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q No secondary br.
2SK3126 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3126
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3126
Switching Regulator Applications
Unit: mm
z Low drain−source ON.
2SK3127 - N-Channel MOSFET
(Toshiba Semiconductor)
.
2SK3128 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3128
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3128
Chopper Regulator, DC−DC Converter and Motor Drive Applications
.
