Part number:
2SK3413LS
Manufacturer:
Sanyo Semicon Device
File Size:
32.16 KB
Description:
N-channel mosfet.
* Package Dimensions unit : mm 2078C [2SK3413LS] 10.0 3.2 4.5 2.8 Low ON-resistance. 4V drive. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 1 2 3 14.0 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current
2SK3413LS Datasheet (32.16 KB)
2SK3413LS
Sanyo Semicon Device
32.16 KB
N-channel mosfet.
📁 Related Datasheet
2SK3411 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : ENN7175
2SK3411
N-Channel Silicon MOSFET
2SK3411
DC / DC Converter Applications
Features
• • •
Package Dimensions
unit : mm 2083B.
2SK3412 - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : ENN7176
2SK3412
N-Channel Silicon MOSFET
2SK3412
DC / DC Converter Applications
Features
• • •
Package Dimensions
unit : mm 2083B.
2SK3414LS - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : ENN7152
2SK3414LS
N-Channel Silicon MOSFET
2SK3414LS
DC / DC Converter Applications
Features
• •
Package Dimensions
unit : mm 207.
2SK3415LS - N-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : ENN7153
2SK3415LS
N-Channel Silicon MOSFET
2SK3415LS
DC / DC Converter, Motor Driver Applications
Features
• •
Package Dimensions.
2SK3416 - N-Channl Silicon MOSFET
(Sanyo Semicon Device)
Ordering number : ENN7440
Features
• Low ON-resistance. • Ultrahigh-speed switcing. • 4V drive.
2SK3416
N-Channl Silicon MOSFET
2SK3416
DC / DC Con.
2SK3417 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3417
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3417
Switching Regulator Applications
· · · · · · Reverse-recovery tim.
2SK3418 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 m typ.
• 4 V gate drive device • High speed s.
2SK3418 - Silicon N-Channel MOSFET
(Renesas)
2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 mΩ typ.
• Capable of 4 V gate drive • High sp.