2SK3418 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK3418
Manufacturer	Hitachi Semiconductor
File Size	48.66 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK3418_HitachiSemiconductor.pdf

Low on-resistance RDS(on) = 4.3 m typ.
4 V gate drive device.
High speed switching Outline TO-220AB D G S ADE-208-941 (Z) 1st. Edition Mar. 2001 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3418 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current VDSS VGSS ID I Note1 D (pulse) I DR Avalanche current Avalanche energy Channel dissipation I Note.

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Published: Sep 27, 2005 |