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2SK3418 Silicon N Channel MOS FET

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Description

2SK3418 Silicon N Channel MOS FET High Speed Power Switching .

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Datasheet Specifications

Part number
2SK3418
Manufacturer
Hitachi Semiconductor
File Size
48.66 KB
Datasheet
2SK3418_HitachiSemiconductor.pdf
Description
Silicon N Channel MOS FET

Features

* Low on-resistance RDS(on) = 4.3 m typ.
* 4 V gate drive device
* High speed switching Outline TO-220AB D G S ADE-208-941 (Z) 1st. Edition Mar. 2001 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3418 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source vol

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