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30A01SP - PNP Transistor

Features

  • 0.6 0.4 15.0 1.8 Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Small ON-resistance (Ron). 0.4 0.5 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEB.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Ordering number : ENN7512 30A01SP PNP Epitaxial Planar Silicon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2033A [30A01SP] 4.0 3.0 2.2 Low-frequency power amplifier, muting circuit. Features • • • 0.6 0.4 15.0 1.8 Large current capacity. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA]. Small ON-resistance (Ron). 0.4 0.5 0.4 1 2 1.3 0.7 3 1.
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