B1140 - 2SB1140

Sanyo Semicon Device

Datasheet Details

Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB.

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Published: Sep 15, 2011 |