* Adoption of FBET process.
* High breakdown voltage.
* Good linearity of hFE and small Cob.
* Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1209 Specifications Absolute Maximum
C2911
Sanyo Semicon Device
41.40 KB
2sc2911.
Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applicat.
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