C3807 Datasheet - Sanyo Semicon Device

C3807 NPN Epitaxial Planar Silicon Transistor

C3807 Features

* Large current capacity (IC=2A).

* Adoption of MBIT process.

* High DC current gain (hFE=800 to 3200).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage

Datasheet Details

C3807

Sanyo Semicon Device

183.61 KB

Npn epitaxial planar silicon transistor.

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