C3998 - 2SC3998

Sanyo Semicon Device

Datasheet Details

High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (adoption of HVP process).
Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25.

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Published: Aug 30, 2006 |