* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
* On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4123] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolu
C4123
Sanyo Semicon Device
92.32 KB
2sc4123.
Ordering number:EN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
📁 Related Datasheet
C4121 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
C4124 2SC4124 (Sanyo)
C4125 2SC4125 (Sanyo Semiconductor Corporation)
C4129 Silicon NPN Power Transistor (INCHANGE)
C4104 2SC4104 (Sanyo)
C4105 2SC4105 (Sanyo)
C4106 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
C4107 2SC4107 (Sanyo)
C4108 2SC4108 (Sanyo Semiconductor)
C4109 2SC4109 (Sanyo Semiconductor)
