C4123 Datasheet - Sanyo Semicon Device

C4123 2SC4123

C4123 Features

* High speed (tf=100ns typ).

* High breakdown voltage (VCBO=1500V).

* High reliability (Adoption of HVP process).

* Adoption of MBIT process.

* On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4123] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolu

Datasheet Details

C4123

Sanyo Semicon Device

92.32 KB

2sc4123.

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C4123 C4123 2SC4123 Sanyo Semicon Device

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