C5046 - 2SC5046

Sanyo Semicon Device

Datasheet Details

High speed (tf=100ns typ).
High reliability (Adoption of HVP process).
High breakdown voltage (VCBO=1600V).
Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5046] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperatur.

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Published: Apr 23, 2015 |