* High speed (tf=100ns typ).
* High reliability (Adoption of HVP process).
* High breakdown voltage (VCBO=1600V).
* Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5046] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete
C5046
Sanyo Semicon Device
110.99 KB
2sc5046.
Ordering number:EN4784
NPN Triple Diffused Planar Silicon Transistor
2SC5046
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
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