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C5047 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High speed (tf=100ns typ).
  • High reliability (Adoption of HVP process).
  • High breakdown voltage (VCBO=1600V).
  • Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5047] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

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Full PDF Text Transcription (Reference)

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Ordering number:EN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5047] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C h t t p : / / w w w . D a t a S h e e t 4 U 5.45 5.45 Conditions 2.