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C504 - 2SC504

Download the C504 datasheet PDF. This datasheet also covers the C503 variant, as both devices belong to the same 2sc504 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Transition Frequency : fx=80MHz (Typ. ).
  • High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II 05.08.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C503-ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C504
Manufacturer Toshiba
File Size 128.20 KB
Description 2SC504
Datasheet download datasheet C504 Datasheet

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Other Datasheets by Toshiba

Part Number Description
C5048 2SC5048
C5000 2SC5000
C5027 2SC5027
C5029 2SC5029
C503 2SC503

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : fx=80MHz (Typ.) • High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II 05.08 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base 2SC503 Voltage 2SC504 Collector- Emitter Voltage 2SC503 2SC504 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL v CBO V CEO vebo ic IB PC T i T Htg RATING 100 80 80 60 5 600 100 800 6 175 -65^175 UNIT V /] O kO // 3 I V 1. EMITTER V 2. BASE 3.