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C5046 - 2SC5046

Key Features

  • High speed (tf=100ns typ).
  • High reliability (Adoption of HVP process).
  • High breakdown voltage (VCBO=1600V).
  • Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5046] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperatur.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5046] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.0 3.4 1.2 1 23 5.45 5.45 2.8 0.