On-chip damper diode. Package Dimensions
unit:mm 2039D
[2SC5041]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
I.
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Ordering number:EN4779
NPN Triple Diffused Planar Silicon Transistor
2SC5041
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (HVP process).
· High breakdown voltage (VCBO=1600V). · Adoption of MBIT process.
· On-chip damper diode.
Package Dimensions
unit:mm 2039D
[2SC5041]
16.0 3.4
5.6 3.1
5.0 8.0 22.0
2.0
21.0 4.