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2SC5029
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• • • •
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1892
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 3 0.2 1.3 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-8M1A
Weight: 0.55 g (typ.) Note: Using continuously under heavy loads (e.g.
C5029 Datasheet
