* Adoption of FBET and MBIT processes.
* Low saturation voltage.
* High current capacity and wide ASO. Package Dimensions unit:mm 2009B [2SB986/2SD1348] ( ) : 2SB986 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage
D1348
Sanyo Semicon Device
127.46 KB
2sd1348.
Ordering number:1245C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB986/2SD1348
50V/4A Switching Applications
Applications
* Power .
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D1345 - 2SD1345
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1345
DESCRIPTION ·High Switching Time ·Low Collector Saturation.
D1347 - NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:1244C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB985/2SD1347
Large-Current Driving Applications
Applcations
· Power supplies, r.
D1300 - Rectifiers
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File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
mlm5LJTI
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R
II
I'
I'
ANODE .
D13001S - NPN POWER TRANSISTER
(ETC)
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER
D13001S
Characteristic/features
High breakdown voltage High current capability High switching speed .
D13003 - NPN Silicon Power Transistor
(CDIL)
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100.
D13003D - NPN Transistor
(PENGAI)
SHENZHENPENGAI SEMICONDUCTOR CO.LTD
D13003D ：
、、。
：
、、、、。
：
TO-126
TEL:0755-27656829 FAX:0755-23443106
NPN
（TC=25℃）
- - -
（TC=25℃）
- - - - - .
D13005 - NPN Silicon Bipolar Transistor
(ETC)
..
NPN
■■ ：、。
D13005
C B E
■■ （Ta=25℃）
- - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25℃） （Ta=25℃）
.
