* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity and wide ASO. ( ) : 2SB985 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Colle
D1347
Sanyo Semicon Device
107.50 KB
Npn epitaxial planar silicon transistors.
Ordering number:1244C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB985/2SD1347
Large-Current Driving Applications
Applcations
* Power supplie.
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D1345 - 2SD1345
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
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2SD1345
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(Sanyo Semicon Device)
Ordering number:1245C
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File No. 784 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
mlm5LJTI
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Rectifiers D1300 Series
R
II
I'
I'
ANODE .
D13001S - NPN POWER TRANSISTER
(ETC)
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER
D13001S
Characteristic/features
High breakdown voltage High current capability High switching speed .
D13003 - NPN Silicon Power Transistor
(CDIL)
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100.
D13003D - NPN Transistor
(PENGAI)
SHENZHENPENGAI SEMICONDUCTOR CO.LTD
D13003D ：
、、。
：
、、、、。
：
TO-126
TEL:0755-27656829 FAX:0755-23443106
NPN
（TC=25℃）
- - -
（TC=25℃）
- - - - - .
D13005 - NPN Silicon Bipolar Transistor
(ETC)
..
NPN
■■ ：、。
D13005
C B E
■■ （Ta=25℃）
- - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25℃） （Ta=25℃）
.
