* High breakdown voltage VCEO 100/120V, High current 1A.
* Low saturation voltage, excellent h FE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 2
D600
Sanyo Semicon Device
203.25 KB
2sd600.
Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Fe.
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ACTIVA / SYMBANG 9F-1, 472, Chung San 2nd Road, Kaohsiung 800,Taiwan, R.O.C. TEL:886-7-2824356 FAX:886-7-2414287 Website:.activa..tw Email:symba.
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ACTIVA / SYMBANG 9F-1, 472, Chung San 2nd Road, Kaohsiung 800,Taiwan, R.O.C. TEL:886-7-2824356 FAX:886-7-2414287 Website:.activa..tw Email:symba.
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