Datasheet4U Logo Datasheet4U.com

DBG150G

Diffused Junction Silicon Diode

DBG150G Features

* Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=15A. Specifications Absolute Maximum Ratings at Ta=25°C Paramet

DBG150G Datasheet (61.27 KB)

Preview of DBG150G PDF

Datasheet Details

Part number:

DBG150G

Manufacturer:

Sanyo Semicon Device

File Size:

61.27 KB

Description:

Diffused junction silicon diode.

📁 Related Datasheet

DBG250G Diffused Junction Silicon Diode (Sanyo Semicon Device)

DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs (STMicroelectronics)

DB-3 Silicon Bidirectional DIAC (Semtech Corporation)

DB-4 Bi-directional trigger diodes (Leshan Radio Company)

DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor (ST Microelectronics)

DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs (STMicroelectronics)

DB-54003-470 HF to 2000 MHz Class AB Common Source (ETC)

DB-54003L-175 HF to 2000 MHz Class AB Common Source (ETC)

DB-54003L-175A HF to 2000 MHz Class AB Common Source (ETC)

DB-54003L-470 HF to 2000 MHz Class AB Common Source (ETC)

TAGS

DBG150G Diffused Junction Silicon Diode Sanyo Semicon Device

Image Gallery

DBG150G Datasheet Preview Page 2 DBG150G Datasheet Preview Page 3

DBG150G Distributor