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DBG250G Diffused Junction Silicon Diode

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Description

www.DataSheet4U.com Ordering number : ENA0701 DBG250G SANYO Semiconductors DATA SHEET DBG250G .

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Datasheet Specifications

Part number
DBG250G
Manufacturer
Sanyo Semicon Device
File Size
61.19 KB
Datasheet
DBG250G_SanyoSemiconDevice.pdf
Description
Diffused Junction Silicon Diode

Features

* Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Paramet

Applications

* outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for

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