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DBG250G

Diffused Junction Silicon Diode

DBG250G Features

* Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Paramet

DBG250G Datasheet (61.19 KB)

Preview of DBG250G PDF

Datasheet Details

Part number:

DBG250G

Manufacturer:

Sanyo Semicon Device

File Size:

61.19 KB

Description:

Diffused junction silicon diode.

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DBG250G Diffused Junction Silicon Diode Sanyo Semicon Device

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