• Part: ECH8601R
  • Description: N-Channel Silicon MOSFET
  • Category: MOSFET
  • Manufacturer: SANYO
  • Size: 67.22 KB
Download ECH8601R Datasheet PDF
SANYO
ECH8601R
Features - - - - - General-Purpose Switching Device Applications Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for Li B charging and discharging Switch. mon-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 6.5 40 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss Conditions ID=1m A, VGS=0V VDS=20V, VGS=0V...