FW306 - N- Channel Silicon MOS FET High Speed Switching
FW306 Features
* High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.
* Low ON-state resistance. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Curr
