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FW306

N- Channel Silicon MOS FET High Speed Switching

FW306 Features

* High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.

* Low ON-state resistance. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Curr

FW306 Datasheet (17.48 KB)

Preview of FW306 PDF

Datasheet Details

Part number:

FW306

Manufacturer:

Sanyo Semicon Device

File Size:

17.48 KB

Description:

N- channel silicon mos fet high speed switching.

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TAGS

FW306 Channel Silicon MOS FET High Speed Switching Sanyo Semicon Device

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