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FW306 N- Channel Silicon MOS FET High Speed Switching

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Description

FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE .

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Datasheet Specifications

Part number
FW306
Manufacturer
Sanyo Semicon Device
File Size
17.48 KB
Datasheet
FW306_SanyoSemiconDevice.pdf
Description
N- Channel Silicon MOS FET High Speed Switching

Features

* High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.
* Low ON-state resistance. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Curr

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