* Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage
PCP1102
Sanyo Semicon Device
112.00 KB
Pnp epitaxial planar silicon transistor.
www.DataSheet.co.kr Ordering number : ENA1163 PCP1102 SANYO Semiconductors DATA SHEET PCP1102 Applications PNP Epitaxial Planar Silico.
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