* Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
PCP1201
Sanyo Semicon Device
111.87 KB
Npn epitaxial planar silicon transistor.
www.DataSheet.co.kr Ordering number : ENA1164 PCP1201 SANYO Semiconductors DATA SHEET PCP1201 Applications NPN Epitaxial Planar Silico.
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