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SBJ100-06J Datasheet - Sanyo Semicon Device

SBJ100-06J Schottky Barrier Diode

SBJ100-06J Features

* Small reverse current (IR typ=5µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute Maximum Ratings at T

SBJ100-06J Datasheet (66.71 KB)

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Datasheet Details

Part number:

SBJ100-06J

Manufacturer:

Sanyo Semicon Device

File Size:

66.71 KB

Description:

Schottky barrier diode.

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TAGS

SBJ100-06J Schottky Barrier Diode Sanyo Semicon Device

SBJ100-06J Distributor