* Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.55V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute Maximum Ratings at
SBJ200-06J Datasheet (66.90 KB)
SBJ200-06J
Sanyo Semicon Device
66.90 KB
Schottky barrier diode.
Ordering number : ENA0193
SBJ200-06J
SBJ200-06J
Applications
* High www.DataSheet4U.com
Schottky Barrier Diode (Twin Type
* Cathode Com.
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